Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 54A (Tc) 326W (Tc) сквозное отверстие TO-220-3

Подробное описание

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube

2 790 ₽

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Бонус: 55.8 !

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Итого: 2 790 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 54A (Tc) 326W (Tc) сквозное отверстие TO-220-3

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220-3
Вес и габариты
current - continuous drain (id) @ 25в°c	54A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	12V
fet type	N-Channel
gate charge (qg) (max) @ vgs	51nC @ 15V
input capacitance (ciss) (max) @ vds	1500pF @ 100V
power dissipation (max)	326W (Tc)
rds on (max) @ id, vgs	52mOhm @ 40A, 12V
vgs (max)	В±25V
vgs(th) (max) @ id	6V @ 10mA

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