N-канал 1200V 36A (Tc) 272W (Tc) сквозное отверстие TO-3P (N)

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C
package	Tube

8 430 ₽

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N-канал 1200V 36A (Tc) 272W (Tc) сквозное отверстие TO-3P (N)

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C
package	Tube
package / case	TO-3P-3, SC-65-3
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-3P(N)
series	*
Вес и габариты
technology	SiCFET (Silicon Carbide)
current - continuous drain (id) @ 25в°c	36A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	20V
fet type	N-Channel
gate charge (qg) (max) @ vgs	67nC @ 20V
input capacitance (ciss) (max) @ vds	1680pF @ 800V
power dissipation (max)	272W (Tc)
rds on (max) @ id, vgs	90mOhm @ 18A, 20V
vgs (max)	В±25V, -10V
vgs(th) (max) @ id	5.8V @ 20mA
fet feature	Standard

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