Discrete Semiconductor Products\Transistors - FETs, MOSFETs - ArraysМассив Mosfet N и P-канал 20 В, 2,5 А, 1 Вт, поверхностный монтаж 8-TSST

Подробное описание

Вес и габариты
base product number	TT8M1 ->
current - continuous drain (id) @ 25в°c	2.5A
drain to source voltage (vdss)	20V

190 ₽

– +

Бонус: 3.8 !

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Итого: 190 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - ArraysМассив Mosfet N и P-канал 20 В, 2,5 А, 1 Вт, поверхностный монтаж 8-TSST

Вес и габариты
base product number	TT8M1 ->
current - continuous drain (id) @ 25в°c	2.5A
drain to source voltage (vdss)	20V
eccn	EAR99
fet feature	Logic Level Gate, 1.5V Drive
fet type	N and P-Channel
gate charge (qg) (max) @ vgs	3.6nC @ 4.5V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	260pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	8-SMD, Flat Lead
power - max	1W
rds on (max) @ id, vgs	72mOhm @ 2.5A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
supplier device package	8-TSST
vgs(th) (max) @ id	1V @ 1mA

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TT8M1TR