Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60V 3A (Tc) 1,7W (Tc) поверхностный монтаж SOT-23

Подробное описание

Вес и габариты
base product number	TSM850 ->
current - continuous drain (id) @ 25в°c	3A (Tc)
drain to source voltage (vdss)	60V

260 ₽

– +

Бонус: 5.2 !

Бонусная программа

Итого: 260 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60V 3A (Tc) 1,7W (Tc) поверхностный монтаж SOT-23

Вес и габариты
base product number	TSM850 ->
current - continuous drain (id) @ 25в°c	3A (Tc)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	9.5nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	529pF @ 30V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	1.7W (Tc)
rds on (max) @ id, vgs	85mOhm @ 2.3A, 10V
rohs status	ROHS3 Compliant
supplier device package	SOT-23
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	2.5V @ 250ВµA

Отзывов нет

Кнопки

TSM850N06CX RFG