Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 600 В, 18 А (Tc), 59,5 Вт (Tc), сквозное отверстие, ITO-220S

Подробное описание

Вес и габариты
base product number	TSM60 ->
current - continuous drain (id) @ 25в°c	18A (Tc)
drain to source voltage (vdss)	600V

2 350 ₽

– +

Бонус: 47 !

Бонусная программа

Итого: 2 350 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 600 В, 18 А (Tc), 59,5 Вт (Tc), сквозное отверстие, ITO-220S

Вес и габариты
base product number	TSM60 ->
current - continuous drain (id) @ 25в°c	18A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	32nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1311pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
power dissipation (max)	59.5W (Tc)
rds on (max) @ id, vgs	190mOhm @ 3.7A, 10V
rohs status	ROHS3 Compliant
supplier device package	ITO-220S
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4V @ 250ВµA

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Кнопки

TSM60NB190CF C0G