Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 250V 8A (Tc) 52W (Tc) сквозное отверстие TO-251 (IPAK)

Подробное описание

Вес и габариты
base product number	TSM600 ->
current - continuous drain (id) @ 25в°c	8A (Tc)
drain to source voltage (vdss)	250V

330 ₽

– +

Бонус: 6.6 !

Бонусная программа

Итого: 330 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 250V 8A (Tc) 52W (Tc) сквозное отверстие TO-251 (IPAK)

Вес и габариты
base product number	TSM600 ->
current - continuous drain (id) @ 25в°c	8A (Tc)
drain to source voltage (vdss)	250V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	8.4nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	423pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube
package / case	TO-251-3 Short Leads, IPak, TO-251AA
power dissipation (max)	52W (Tc)
rds on (max) @ id, vgs	600mOhm @ 4A, 10V
rohs status	ROHS3 Compliant
supplier device package	TO-251 (IPAK)
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 250ВµA

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Кнопки

TSM600N25ECH C5G