Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 4A (Tc) 41,6W (Tc) сквозное отверстие ITO-220

Подробное описание

Вес и габариты
base product number	TSM4 ->
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	650V

880 ₽

– +

Бонус: 17.6 !

Бонусная программа

Итого: 880 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 4A (Tc) 41,6W (Tc) сквозное отверстие ITO-220

Вес и габариты
base product number	TSM4 ->
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	16.8nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	596pF @ 50V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack, Isolated Tab
power dissipation (max)	41.6W (Tc)
rds on (max) @ id, vgs	2.6Ohm @ 1.2A, 10V
reach status	REACH Affected
rohs status	ROHS3 Compliant
supplier device package	ITO-220
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	3.8V @ 250ВµA

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Кнопки

TSM4ND65CI