Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 600 В, 4 А (Tc) 86,2 Вт (Tc), поверхностный монтаж, TO-252, (D-Pak)

Подробное описание

Вес и габариты
base product number	TSM4N60 ->
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	600V

380 ₽

– +

Бонус: 7.6 !

Бонусная программа

Итого: 380 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 600 В, 4 А (Tc) 86,2 Вт (Tc), поверхностный монтаж, TO-252, (D-Pak)

Вес и габариты
base product number	TSM4N60 ->
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	12nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	545pF @ 25V
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-252-3, DPak (2 Leads + Tab), SC-63
power dissipation (max)	86.2W (Tc)
rds on (max) @ id, vgs	2.5Ohm @ 2A, 10V
rohs status	ROHS3 Compliant
supplier device package	TO-252, (D-Pak)
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 250ВµA

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TSM4N60ECP ROG