Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 30 В, 5,5 А (Tc) 1,8 Вт (Tc), поверхностный монтаж SOT-23

Подробное описание

Вес и габариты
base product number	TSM320 ->
current - continuous drain (id) @ 25в°c	5.5A (Tc)
drain to source voltage (vdss)	30V

300 ₽

– +

Бонус: 6 !

Бонусная программа

Итого: 300 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 30 В, 5,5 А (Tc) 1,8 Вт (Tc), поверхностный монтаж SOT-23

Вес и габариты
base product number	TSM320 ->
current - continuous drain (id) @ 25в°c	5.5A (Tc)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	8.9nC @ 4.5V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	792pF @ 15V
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	1.8W (Tc)
rds on (max) @ id, vgs	32mOhm @ 4A, 4.5V
rohs status	ROHS3 Compliant
supplier device package	SOT-23
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	900mV @ 250ВµA

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Кнопки

TSM320N03CX RFG