TSM2308CX RFG, N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

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Артикул: TSM2308CX RFG
Semiconductors\Discrete Semiconductors\MOSFETsThe Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode.
Вес и габариты
base product numberTSM2308 ->
channel modeEnhancement
channel typeN
140
+
Бонус: 2.8 !
Бонусная программа
Итого: 140
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Semiconductors\Discrete Semiconductors\MOSFETsThe Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode.
Вес и габариты
base product numberTSM2308 ->
channel modeEnhancement
channel typeN
current - continuous drain (id) @ 25в°c3A (Ta)
drain to source voltage (vdss)60V
drive voltage (max rds on, min rds on)4.5V, 10V
eccnEAR99
fet typeN-Channel
forward diode voltage1.2V
gate charge (qg) (max) @ vgs4.3nC @ 4.5V
htsus8541.29.0095
input capacitance (ciss) (max) @ vds511pF @ 15V
maximum continuous drain current3 A
maximum drain source resistance192 mΩ
maximum drain source voltage60 V
maximum gate source voltage±20 V
maximum gate threshold voltage2.5V
maximum operating temperature+150 C
maximum power dissipation1.25 W
minimum gate threshold voltage1.2V
minimum operating temperature-55 C
moisture sensitivity level (msl)3 (168 Hours)
mounting typeSurface Mount
number of elements per chip1
operating temperature-55В°C ~ 150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / caseTO-236-3, SC-59, SOT-23-3
package typeSOT-23
pin count3
power dissipation (max)1.25W (Ta)
rds on (max) @ id, vgs156mOhm @ 3A, 10V
rohs statusROHS3 Compliant
supplier device packageSOT-23
technologyMOSFET (Metal Oxide)
transistor configurationSingle
typical gate charge @ vgs3.99 nC 4.5 V
vgs (max)В±20V
vgs(th) (max) @ id2.5V @ 250ВµA
width1.4mm
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