Name: TSM2308CX RFG, MOSFET, Single - N-Channel, 60V, 3A, SOT-23
SKU: TSM2308CX RFG

N-канал 60V 3A (Ta) 1,25W (Ta) поверхностный монтаж SOT-23

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N-канал 60V 3A (Ta) 1,25W (Ta) поверхностный монтаж SOT-23

Вес и габариты
base product number	TSM2308 ->
channel mode	Enhancement
channel type	N
current - continuous drain (id) @ 25в°c	3A (Ta)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	N-Channel
forward diode voltage	1.2V
gate charge (qg) (max) @ vgs	4.3nC @ 4.5V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	511pF @ 15V
maximum continuous drain current	3 A
maximum drain source resistance	192 mΩ
maximum drain source voltage	60 V
maximum gate source voltage	±20 V
maximum gate threshold voltage	2.5V
maximum operating temperature	+150 C
maximum power dissipation	1.25 W
minimum gate threshold voltage	1.2V
minimum operating temperature	-55 C
moisture sensitivity level (msl)	3 (168 Hours)
mounting type	Surface Mount
number of elements per chip	1
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
package type	SOT-23
pin count	3
power dissipation (max)	1.25W (Ta)
rds on (max) @ id, vgs	156mOhm @ 3A, 10V
rohs status	ROHS3 Compliant
supplier device package	SOT-23
technology	MOSFET (Metal Oxide)
transistor configuration	Single
typical gate charge @ vgs	3.99 nC 4.5 V
вес, г	0.05
vgs (max)	В±20V
vgs(th) (max) @ id	2.5V @ 250ВµA
width	1.4mm

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