Name: TSM1NB60CH C5G, N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi TSM1NB60CH C5G
SKU: TSM1NB60CH C5G

N-канал 600V 1A (Tc) 39W (Tc) сквозное отверстие TO-251 (IPAK)

Подробное описание

Вес и габариты
base product number	TSM1NB60 ->
current - continuous drain (id) @ 25в°c	1A (Tc)
drain to source voltage (vdss)	600V

390 ₽

- +

Бонус: 7.8 !

Бонусная программа

Итого: 390 ₽

Купить

N-канал 600V 1A (Tc) 39W (Tc) сквозное отверстие TO-251 (IPAK)

Вес и габариты
base product number	TSM1NB60 ->
current - continuous drain (id) @ 25в°c	1A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	6.1nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	138pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-251-3 Short Leads, IPak, TO-251AA
power dissipation (max)	39W (Tc)
rds on (max) @ id, vgs	10Ohm @ 500mA, 10V
rohs status	ROHS3 Compliant
supplier device package	TO-251 (IPAK)
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 250ВµA

0.0

общая оценка

Всего 0 отзывов

0 отзывов

Отзывов нет

Кнопки