Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 17A (Tc) 96W (Tc) сквозное отверстие TO-220AB

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube

2 580 ₽

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Бонус: 51.6 !

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Итого: 2 580 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 17A (Tc) 96W (Tc) сквозное отверстие TO-220AB

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220AB
Вес и габариты
technology	GaNFET (Gallium Nitride)
current - continuous drain (id) @ 25в°c	17A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	9.3nC @ 4.5V
input capacitance (ciss) (max) @ vds	760pF @ 480V
power dissipation (max)	96W (Tc)
rds on (max) @ id, vgs	180mOhm @ 11A, 8V
vgs (max)	В±18V
vgs(th) (max) @ id	2.6V @ 500ВµA

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