Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 35A (Tc) 125W (Tc) сквозное отверстие TO-247-3

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 35A (Tc) 125W (Tc) сквозное отверстие TO-247-3

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-247-3
series	Automotive, AEC-Q101 ->
Вес и габариты
technology	GaNFET (Gallium Nitride)
current - continuous drain (id) @ 25в°c	35A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	42nC @ 8V
input capacitance (ciss) (max) @ vds	2200pF @ 400V
power dissipation (max)	125W (Tc)
rds on (max) @ id, vgs	62mOhm @ 22A, 8V
vgs (max)	В±18V
vgs(th) (max) @ id	2.6V @ 700ВµA

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