Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 900V 34A (Tc) 119W (Tc) сквозное отверстие TO-247-3

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C
package	Tube

4 670 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 900V 34A (Tc) 119W (Tc) сквозное отверстие TO-247-3

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C
package	Tube
package / case	TO-247-3
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-247-3
california prop 65	Warning Information
Вес и габариты
technology	GaNFET (Cascode Gallium Nitride FET)
current - continuous drain (id) @ 25в°c	34A (Tc)
drain to source voltage (vdss)	900V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	17.5nC @ 10V
input capacitance (ciss) (max) @ vds	980pF @ 600V
power dissipation (max)	119W (Tc)
rds on (max) @ id, vgs	63mOhm @ 22A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4.4V @ 700ВµA

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