Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 200 В 175 мА (Tj) 1 Вт (Ta) сквозное отверстие TO-92-3

Подробное описание

Вес и габариты
base product number	TP0620 ->
current - continuous drain (id) @ 25в°c	175mA (Tj)
drain to source voltage (vdss)	200V

620 ₽

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Бонус: 12.4 !

Бонусная программа

Итого: 620 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 200 В 175 мА (Tj) 1 Вт (Ta) сквозное отверстие TO-92-3

Вес и габариты
base product number	TP0620 ->
current - continuous drain (id) @ 25в°c	175mA (Tj)
drain to source voltage (vdss)	200V
drive voltage (max rds on, min rds on)	5V, 10V
eccn	EAR99
fet type	P-Channel
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	150pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Bulk
package / case	TO-226-3, TO-92-3 (TO-226AA)
pcn packaging	http://www.microchip.com/mymicrochip/NotificationD
power dissipation (max)	1W (Ta)
rds on (max) @ id, vgs	12Ohm @ 200mA, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-92-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	2.4V @ 1mA

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TP0620N3-G