TK62J60W,S1VQ, Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-3PN
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Артикул: TK62J60W,S1VQ
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH Si 600 В 61,8 А 3-контактный (3 вкладки) TO-3PN
| Основные | |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Through Hole |
| operating temperature | 150В°C (TJ) |
| package | Tube |
| package / case | TO-3P-3, SC-65-3 |
| rohs status | RoHS Compliant |
| eccn | EAR99 |
| htsus | 8541.29.0095 |
| supplier device package | TO-3P(N) |
| pin count | 3 |
| product category | Power MOSFET |
| series | DTMOSIV -> |
| automotive | No |
| eu rohs | Compliant with Exemption |
| lead shape | Through Hole |
| maximum operating temperature (°c) | 150 |
| mounting | Through Hole |
| part status | Active |
| pcb changed | 3 |
| ppap | No |
| standard package name | TO-3PN |
| supplier package | TO-3PN |
| base product number | TC74VHCT244 -> |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 400000 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| process technology | DTMOSIV |
| Вес и габариты | |
| number of elements per chip | 1 |
| channel type | N |
| technology | MOSFET (Metal Oxide) |
| tab | Tab |
| material | Si |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 61.8 |
| maximum drain source resistance (mohm) | 40 10V |
| maximum drain source voltage (v) | 600 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±30 |
| maximum gate threshold voltage (v) | 3.7 |
| maximum idss (ua) | 10 |
| typical fall time (ns) | 15 |
| typical gate charge @ 10v (nc) | 180 |
| typical gate charge @ vgs (nc) | 180 10V |
| typical input capacitance @ vds (pf) | 6500 300V |
| typical rise time (ns) | 58 |
| current - continuous drain (id) @ 25в°c | 61.8A (Ta) |
| drain to source voltage (vdss) | 600V |
| drive voltage (max rds on, min rds on) | 10V |
| fet type | N-Channel |
| gate charge (qg) (max) @ vgs | 180nC @ 10V |
| input capacitance (ciss) (max) @ vds | 6500pF @ 300V |
| power dissipation (max) | 400W (Tc) |
| rds on (max) @ id, vgs | 38mOhm @ 30.9A, 10V |
| vgs (max) | В±30V |
| vgs(th) (max) @ id | 3.7V @ 3.1mA |
| fet feature | Super Junction |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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