Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600 В, 9,7 A (Ta) 30 Вт (Tc), сквозное отверстие TO-220SIS

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube

620 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600 В, 9,7 A (Ta) 30 Вт (Tc), сквозное отверстие TO-220SIS

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-220SIS
series	DTMOSIV ->
base product number	TC58NVG2S0 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	9.7A (Ta)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	25nC @ 10V
input capacitance (ciss) (max) @ vds	720pF @ 300V
power dissipation (max)	30W (Tc)
rds on (max) @ id, vgs	450mOhm @ 4.9A, 10V
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 500ВµA

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