Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 29A (Tc) 250W (Tc) сквозное отверстие TO-247-3

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube

540 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 29A (Tc) 250W (Tc) сквозное отверстие TO-247-3

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube
package / case	TO-247-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	TO-247-3
series	MDmeshв„ў II ->
base product number	STW34 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
other related documents	http://www.st.com/web/catalog/sense_power/FM100/CL
current - continuous drain (id) @ 25в°c	29A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	80nC @ 10V
input capacitance (ciss) (max) @ vds	2722pF @ 100V
power dissipation (max)	250W (Tc)
rds on (max) @ id, vgs	105mOhm @ 14.5A, 10V
vgs (max)	В±25V
vgs(th) (max) @ id	4V @ 250ВµA

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