STW10NK60Z, Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-247 Tube

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Артикул: STW10NK60Z
N-Channel MDmesh ™ SuperMESH ™, от 250 до 650 В, STMicroelectronics
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
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N-Channel MDmesh ™ SuperMESH ™, от 250 до 650 В, STMicroelectronics
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
packageTube
package / caseTO-247-3
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packageTO-247-3
package typeTO-247
minimum operating temperature-55 C
width5.15mm
pin count3
maximum operating temperature+150 C
seriesSuperMESHв„ў ->
base product numberSTW10 ->
Вес и габариты
number of elements per chip1
channel typeN
technologyMOSFET (Metal Oxide)
other related documentshttp://www.st.com/web/catalog/sense_power/FM100/CL
transistor configurationSingle
maximum drain source voltage600 V
maximum gate source voltage-30 V, +30 V
maximum continuous drain current10 A
transistor materialSi
maximum gate threshold voltage4.5V
maximum drain source resistance750 mΩ
channel modeEnhancement
current - continuous drain (id) @ 25в°c10A (Tc)
drain to source voltage (vdss)600V
drive voltage (max rds on, min rds on)10V
fet typeN-Channel
gate charge (qg) (max) @ vgs70nC @ 10V
input capacitance (ciss) (max) @ vds1370pF @ 25V
power dissipation (max)156W (Tc)
rds on (max) @ id, vgs750mOhm @ 4.5A, 10V
vgs (max)В±30V
vgs(th) (max) @ id4.5V @ 250ВµA
minimum gate threshold voltage3V
maximum power dissipation156 W
typical gate charge @ vgs50 nC 10 V
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