STP80N10F7, MOSFET N-Ch 100V 0.0085Ohm typ 80A STripFET VII

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Артикул: STP80N10F7
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSTripFET Power MOSFETsSTMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction...
Основные
вес, г2
factory pack quantity: factory pack quantity:1000
manufacturer:STMicroelectronics
maximum operating temperature:+175 C
670
+
Бонус: 13.4 !
Бонусная программа
Итого: 670
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSTripFET Power MOSFETsSTMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.
Основные
вес, г2
factory pack quantity: factory pack quantity:1000
manufacturer:STMicroelectronics
maximum operating temperature:+175 C
minimum operating temperature:-55 C
mounting style:Through Hole
product category:MOSFET
product type:MOSFET
series:STP80N10F7
subcategory:MOSFETs
packaging:Tube
Вес и габариты
package/case:TO-220-3
tradename:STripFET
pd - power dissipation:110 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:80 A
qg - gate charge:45 nC
rds on - drain-source resistance:10 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:100 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:3.5 V
typical turn-off delay time:36 ns
typical turn-on delay time:19 ns
fall time:13 ns
rise time:32 ns
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