STP75N3LLH6, Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Tube

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Артикул: STP75N3LLH6
Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 30V 75A 3-Pin (3 Tab) TO-220AB Tube
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 175В°C (TJ)
packageTube
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Итого: 120
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 30V 75A 3-Pin (3 Tab) TO-220AB Tube
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 175В°C (TJ)
packageTube
package / caseTO-220-3
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packageTO-220
pin count3
packagingTube
product categoryPower MOSFET
seriesDeepGATEв„ў, STripFETв„ў VI ->
automotiveNo
eu rohsCompliant with Exemption
lead shapeThrough Hole
maximum operating temperature (°c)175
mountingThrough Hole
part statusObsolete
pcb changed3
ppapNo
standard package nameTO-220
supplier packageTO-220AB
base product numberSTP75N ->
eccn (us)EAR99
maximum power dissipation (mw)60000
minimum operating temperature (°c)-55
configurationSingle
Вес и габариты
number of elements per chip1
channel typeN
technologyMOSFET (Metal Oxide)
tabTab
channel modeEnhancement
maximum continuous drain current (a)75
maximum drain source resistance (mohm)5.9 10V
maximum drain source voltage (v)30
maximum gate source voltage (v)±20
typical fall time (ns)12
typical gate charge @ vgs (nc)17 4.5V
typical input capacitance @ vds (pf)1690 25V
typical rise time (ns)30
typical turn-off delay time (ns)37
typical turn-on delay time (ns)9.5
current - continuous drain (id) @ 25в°c75A (Tc)
drain to source voltage (vdss)30V
drive voltage (max rds on, min rds on)4.5V, 10V
fet typeN-Channel
gate charge (qg) (max) @ vgs23.8nC @ 4.5V
input capacitance (ciss) (max) @ vds2030pF @ 25V
power dissipation (max)60W (Tc)
rds on (max) @ id, vgs5.9mOhm @ 37.5A, 10V
vgs (max)В±20V
vgs(th) (max) @ id2.5V @ 250ВµA
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