STP17N62K3, Trans MOSFET N-CH 620V 15.5A 3-Pin(3+Tab) TO-220AB Tube

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Артикул: STP17N62K3
N-канал 620 В, 15,5 A (Tc) 190 Вт (Tc), сквозное отверстие TO-220AB
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature150В°C (TJ)
packageTube
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N-канал 620 В, 15,5 A (Tc) 190 Вт (Tc), сквозное отверстие TO-220AB
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature150В°C (TJ)
packageTube
package / caseTO-220-3
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packageTO-220AB
pin count3
packagingTube
product categoryPower MOSFET
seriesSuperMESH3в„ў ->
automotiveNo
eu rohsCompliant with Exemption
lead shapeThrough Hole
maximum operating temperature (°c)150
mountingThrough Hole
part statusObsolete
pcb changed3
standard package nameTO-220
supplier packageTO-220
base product numberSTP17N ->
eccn (us)EAR99
maximum power dissipation (mw)190000
minimum operating temperature (°c)-55
configurationSingle
package height9.15(Max)
package length10.4(Max)
package width4.6(Max)
Вес и габариты
number of elements per chip1
channel typeN
technologyMOSFET (Metal Oxide)
tabTab
channel modeEnhancement
maximum continuous drain current (a)15.5
maximum drain source resistance (mohm)340@10V
maximum drain source voltage (v)620
maximum gate source voltage (v)±30
typical fall time (ns)62
typical gate charge @ 10v (nc)105
typical gate charge @ vgs (nc)105@10V
typical input capacitance @ vds (pf)3100@50V
typical rise time (ns)29
typical turn-off delay time (ns)110
typical turn-on delay time (ns)22
current - continuous drain (id) @ 25в°c15.5A (Tc)
drain to source voltage (vdss)620V
drive voltage (max rds on, min rds on)10V
fet typeN-Channel
gate charge (qg) (max) @ vgs94nC @ 10V
input capacitance (ciss) (max) @ vds2500pF @ 50V
power dissipation (max)190W (Tc)
rds on (max) @ id, vgs380mOhm @ 7.5A, 10V
vgs (max)В±30V
vgs(th) (max) @ id4.5V @ 100ВµA
militaryNo
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