Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 11A (Tc) 109W (Tc) сквозное отверстие TO-220

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

210 ₽

– +

Бонус: 4.2 !

Бонусная программа

Итого: 210 ₽

Купить

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 11A (Tc) 109W (Tc) сквозное отверстие TO-220

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	TO-220
series	FDmeshв„ў II ->
base product number	STP13 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	11A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	24.5nC @ 10V
input capacitance (ciss) (max) @ vds	845pF @ 50V
power dissipation (max)	109W (Tc)
rds on (max) @ id, vgs	380mOhm @ 5.5A, 10V
vgs (max)	В±25V
vgs(th) (max) @ id	5V @ 250ВµA

Отзывов нет

Кнопки