Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 40V 120A (Tc) 300W (Tc) сквозное отверстие I2PAK (TO-262)

Подробное описание

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 40V 120A (Tc) 300W (Tc) сквозное отверстие I2PAK (TO-262)

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-262-3 Long Leads, IВІPak, TO-262AA
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	I2PAK (TO-262)
series	DeepGATEв„ў, STripFETв„ў VI ->
base product number	STI400N ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	120A (Tc)
drain to source voltage (vdss)	40V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	377nC @ 10V
input capacitance (ciss) (max) @ vds	20000pF @ 25V
power dissipation (max)	300W (Tc)
rds on (max) @ id, vgs	1.7mOhm @ 60A, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	4.5V @ 250ВµA

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STI400N4F6