Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 28A (Tc) 190W (Tc) сквозное отверстие I2PAKFP (TO-281)

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650V 28A (Tc) 190W (Tc) сквозное отверстие I2PAKFP (TO-281)

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-262-3 Full Pack, IВІPak
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	I2PAKFP (TO-281)
series	MDmeshв„ў V ->
base product number	STI34N ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	28A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	62.5nC @ 10V
input capacitance (ciss) (max) @ vds	2700pF @ 100V
power dissipation (max)	190W (Tc)
rds on (max) @ id, vgs	110mOhm @ 14A, 10V
vgs (max)	В±25V
vgs(th) (max) @ id	5V @ 250ВµA

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STI34N65M5