Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 600V 11A, 3-контактный (3 выступа), трубка I2PAKFP

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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 600V 11A, 3-контактный (3 выступа), трубка I2PAKFP

Основные
pin count	3
packaging	Tube
product category	Power MOSFET
automotive	No
eu rohs	Compliant with Exemption
maximum operating temperature (°c)	150
mounting	Through Hole
part status	Obsolete
pcb changed	3
ppap	No
supplier package	I2PAKFP
eccn (us)	EAR99
maximum power dissipation (mw)	25000
minimum operating temperature (°c)	-55
configuration	Single
process technology	MDmesh
Вес и габариты
number of elements per chip	1
channel type	N
tab	Tab
channel mode	Enhancement
maximum continuous drain current (a)	11
maximum drain source resistance (mohm)	360 10V
maximum drain source voltage (v)	600
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±25
maximum gate threshold voltage (v)	4
maximum idss (ua)	1
typical fall time (ns)	10
typical gate charge @ 10v (nc)	30
typical gate charge @ vgs (nc)	30 10V
typical input capacitance @ vds (pf)	790 50V
typical rise time (ns)	8
typical turn-off delay time (ns)	30
typical turn-on delay time (ns)	3

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