SSM6K504NU,LF

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Discrete Solid State Drive (SSD) Solutions Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets the latest requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the new powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands, along with protection that keeps important data safe from...
Основные
factory pack quantity: factory pack quantity:3000
manufacturer:Toshiba
maximum operating temperature:+150 C
minimum operating temperature:-55 C
130
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Бонус: 2.6 !
Бонусная программа
Итого: 130
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Discrete Solid State Drive (SSD) Solutions Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets the latest requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the new powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands, along with protection that keeps important data safe from failures. Toshiba offers a wide lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surge during hotplug.
Основные
factory pack quantity: factory pack quantity:3000
manufacturer:Toshiba
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SSM6K
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:UDFN-6
tradename:U-MOSVII-H
pd - power dissipation:2.5 W
number of channels:1 Channel
qualification:AEC-Q101
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:9 A
qg - gate charge:4.8 nC
rds on - drain-source resistance:26 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:30 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1.3 V
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