SSM3K7002KF,LF, MOSFET Small-signal Nch MOSFET ID:0.4A

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Артикул: SSM3K7002KF,LF
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSSM3 High Current MOSFETsToshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC...
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Toshiba
maximum operating temperature:+150 C
98
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Бонус: 1.96 !
Бонусная программа
Итого: 98
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSSM3 High Current MOSFETsToshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches.
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Toshiba
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SSM3K7002KF
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:SOT-346-3
tradename:U-MOSVII-H
pd - power dissipation:900 mW
number of channels:1 Channel
qualification:AEC-Q101
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:400 mA
qg - gate charge:390 pC
rds on - drain-source resistance:1.05 Ohms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:60 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1.1 V
typical turn-off delay time:38 ns
typical turn-on delay time:5.5 ns
forward transconductance - min:1 S
fall time:17 ns
rise time:3.6 ns
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