SQJQ142E-T1_GE3, MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

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Артикул: SQJQ142E-T1_GE3
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSQJQ Automotive MOSFETsVishay / Siliconix SQJQ Automotive MOSFETs are N-Channel TrenchFET ® power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SQJQ Automotive MOSFETs offer very low R DS(on) and operate within -55°C to +175°C temperature range. These automotive-grade MOSFETs are available in a fully lead (Pb) free PowerPAK ® 8x8L package with single/dual configurations. Typical...
Основные
вес, г0.05
factory pack quantity: factory pack quantity:2000
manufacturer:Vishay
maximum operating temperature:+175 C
760
+
Бонус: 15.2 !
Бонусная программа
Итого: 760
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSQJQ Automotive MOSFETsVishay / Siliconix SQJQ Automotive MOSFETs are N-Channel TrenchFET ® power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SQJQ Automotive MOSFETs offer very low R DS(on) and operate within -55°C to +175°C temperature range. These automotive-grade MOSFETs are available in a fully lead (Pb) free PowerPAK ® 8x8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives/actuators, body systems, and battery management.
Основные
вес, г0.05
factory pack quantity: factory pack quantity:2000
manufacturer:Vishay
maximum operating temperature:+175 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SQJ
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:PowerPAK-8x8-4
tradename:TrenchFET
pd - power dissipation:500 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:460 A
qg - gate charge:92 nC
rds on - drain-source resistance:1 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:40 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:3.5 V
typical turn-off delay time:37 ns
typical turn-on delay time:18.5 ns
forward transconductance - min:150 S
fall time:14 ns
rise time:18 ns
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