SQ1912AEEH-T1_GE3

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - ArraysMosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5W Surface Mount PowerPAKВ® SC-70-6 Dual
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeSurface Mount
operating temperature-55В°C ~ 175В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
160
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Бонус: 3.2 !
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Итого: 160
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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - ArraysMosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5W Surface Mount PowerPAKВ® SC-70-6 Dual
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeSurface Mount
operating temperature-55В°C ~ 175В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / casePowerPAKВ® SC-70-6 Dual
eccnEAR99
htsus8541.29.0095
supplier device packagePowerPAKВ® SC-70-6 Dual
seriesAutomotive, AEC-Q101, TrenchFETВ® ->
base product numberSQ1912 ->
factory pack quantity: factory pack quantity:3000
manufacturer:Vishay
maximum operating temperature:+175 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SQ
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:SOT-363-6
tradename:TrenchFET
pd - power dissipation:1.5 W
number of channels:2 Channel
qualification:AEC-Q101
technology:Si
configuration:Dual
current - continuous drain (id) @ 25в°c800mA (Tc)
drain to source voltage (vdss)20V
fet type2 N-Channel (Dual)
gate charge (qg) (max) @ vgs1.25nC @ 4.5V
input capacitance (ciss) (max) @ vds27pF @ 10V
rds on (max) @ id, vgs280mOhm @ 1.2A, 4.5V
vgs(th) (max) @ id1.5V @ 250ВµA
channel mode:Enhancement
id - continuous drain current:800 mA
qg - gate charge:1.25 nC
rds on - drain-source resistance:200 mOhms
transistor polarity:N-Channel
transistor type:2 N-Channel
vds - drain-source breakdown voltage:20 V
vgs - gate-source voltage:-12 V, +12 V
vgs th - gate-source threshold voltage:450 mV
power - max1.5W
fet featureStandard
typical turn-off delay time:715 ns
typical turn-on delay time:66 ns
forward transconductance - min:2.6 S
fall time:390 ns
rise time:108 ns
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