Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 30V 85A (Tc) 135W (Tc) поверхностный монтаж TO-263-3

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	85A (Tc)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V

550 ₽

– +

Бонус: 11 !

Бонусная программа

Итого: 550 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 30V 85A (Tc) 135W (Tc) поверхностный монтаж TO-263-3

Вес и габариты
current - continuous drain (id) @ 25в°c	85A (Tc)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	94.2nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	6200pF @ 15V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
power dissipation (max)	135W (Tc)
rds on (max) @ id, vgs	2.4mOhm @ 110A, 10V
rohs status	RoHS Compliant
supplier device package	TO-263-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	2.5V @ 1.5mA

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Кнопки

SKI03021