Полупроводники - Дискретные\МОП-транзисторы\Двойные МОП-транзисторыTrans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

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Полупроводники - Дискретные\МОП-транзисторы\Двойные МОП-транзисторыTrans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP

Основные
pin count	8
product category	Power MOSFET
automotive	No
eu rohs	Compliant with Exemption
maximum operating temperature (°c)	150
mounting	Surface Mount
part status	Active
pcb changed	8
ppap	No
supplier package	PowerPAIR EP
eccn (us)	EAR99
maximum power dissipation (mw)	3700
minimum operating temperature (°c)	-55
configuration	Dual
process technology	TrenchFET Gen IV
Вес и габариты
number of elements per chip	2
channel type	N
channel mode	Enhancement
maximum continuous drain current (a)	15.6
maximum drain source resistance (mohm)	11.5 10V
maximum drain source voltage (v)	30
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	20
maximum gate threshold voltage (v)	2.4
maximum idss (ua)	1
typical fall time (ns)	10\|7
typical gate charge @ 10v (nc)	10
typical gate charge @ vgs (nc)	4.5 4.5V\|10 10V
typical input capacitance @ vds (pf)	650 15V
typical rise time (ns)	15\|50
typical turn-off delay time (ns)	17\|16
typical turn-on delay time (ns)	15\|8

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