SIR466DP-T1-GE3, Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R
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Артикул: SIR466DP-T1-GE3
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R
| Основные | |
| pin count | 8 |
| packaging | Tape and Reel |
| product category | Power MOSFET |
| automotive | No |
| eu rohs | Compliant |
| lead shape | No Lead |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | Active |
| pcb changed | 8 |
| ppap | No |
| supplier package | PowerPAK SO EP |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 5000 |
| minimum operating temperature (°c) | -55 |
| configuration | Single Quad Drain Triple Source |
| factory pack quantity: factory pack quantity: | 3000 |
| manufacturer: | Vishay |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | SMD/SMT |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | SIR |
| subcategory: | MOSFETs |
| packaging: | Reel, Cut Tape, MouseReel |
| part # aliases: | SIR466DP-GE3 |
| process technology | TrenchFET |
| Вес и габариты | |
| package/case: | PowerPAK-SO-8 |
| tradename: | TrenchFET, PowerPAK |
| number of elements per chip | 1 |
| channel type | N |
| pd - power dissipation: | 54 W |
| number of channels: | 1 Channel |
| technology: | Si |
| configuration: | Single |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 40 |
| maximum drain source resistance (mohm) | 3.5 10V |
| maximum drain source voltage (v) | 30 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 2.4 |
| maximum idss (ua) | 1 |
| typical fall time (ns) | 15 |
| typical gate charge @ 10v (nc) | 42.5 |
| typical gate charge @ vgs (nc) | 42.5 10V|21.5 15V |
| typical input capacitance @ vds (pf) | 2730 15V |
| typical rise time (ns) | 19 |
| typical turn-off delay time (ns) | 35 |
| typical turn-on delay time (ns) | 30 |
| channel mode: | Enhancement |
| id - continuous drain current: | 40 A |
| qg - gate charge: | 65 nC |
| rds on - drain-source resistance: | 3.5 mOhms |
| transistor polarity: | N-Channel |
| vds - drain-source breakdown voltage: | 30 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 1.2 V |
| operating junction temperature (°c) | -55 to 150 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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