SIR466DP-T1-GE3, MOSFET 30V Vds 20V Vgs PowerPAK SO-8

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Артикул: SIR466DP-T1-GE3
Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrenchFET® Gen III Power MOSFETsVishay Semiconductor TrenchFET ® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK ® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET...
Основные
вес, г0.51
pin count8
packagingTape and Reel
product categoryPower MOSFET
370
+
Бонус: 7.4 !
Бонусная программа
Итого: 370
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrenchFET® Gen III Power MOSFETsVishay Semiconductor TrenchFET ® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK ® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Основные
вес, г0.51
pin count8
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant
lead shapeNo Lead
maximum operating temperature (°c)150
mountingSurface Mount
part statusActive
pcb changed8
ppapNo
supplier packagePowerPAK SO EP
eccn (us)EAR99
maximum power dissipation (mw)5000
minimum operating temperature (°c)-55
configurationSingle Quad Drain Triple Source
factory pack quantity: factory pack quantity:3000
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SIR
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
part # aliases:SIR466DP-GE3
process technologyTrenchFET
Вес и габариты
package/case:PowerPAK-SO-8
tradename:TrenchFET, PowerPAK
number of elements per chip1
channel typeN
pd - power dissipation:54 W
number of channels:1 Channel
technology:Si
configuration:Single
channel modeEnhancement
maximum continuous drain current (a)40
maximum drain source resistance (mohm)3.5 10V
maximum drain source voltage (v)30
maximum gate source leakage current (na)100
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)2.4
maximum idss (ua)1
typical fall time (ns)15
typical gate charge @ 10v (nc)42.5
typical gate charge @ vgs (nc)42.5 10V|21.5 15V
typical input capacitance @ vds (pf)2730 15V
typical rise time (ns)19
typical turn-off delay time (ns)35
typical turn-on delay time (ns)30
channel mode:Enhancement
id - continuous drain current:40 A
qg - gate charge:65 nC
rds on - drain-source resistance:3.5 mOhms
transistor polarity:N-Channel
vds - drain-source breakdown voltage:30 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1.2 V
operating junction temperature (°c)-55 to 150
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