N-канал 800 В, 2,9 A (Tc), 62,5 Вт (Tc), сквозное отверстие TO-251AA

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

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N-канал 800 В, 2,9 A (Tc), 62,5 Вт (Tc), сквозное отверстие TO-251AA

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-251-3 Short Leads, IPak, TO-251AA
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-251AA
series	E ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	2.9A (Tc)
drain to source voltage (vdss)	800V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	10.5nC @ 10V
input capacitance (ciss) (max) @ vds	180pF @ 100V
power dissipation (max)	62.5W (Tc)
rds on (max) @ id, vgs	2.9Ohm @ 500mA, 10V
vgs (max)	В±30V
vgs(th) (max) @ id	4V @ 250ВµA

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SIHU2N80AE-GE3, N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK SIHU2N80AE-GE3