SIHG47N60E-GE3, N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-247AC SIHG47N60E-GE3

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Артикул: SIHG47N60E-GE3
Основные
pin count3
product categoryPower MOSFET
automotiveNo
eu rohsCompliant with Exemption
1 790
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Бонус: 35.8 !
Бонусная программа
Итого: 1 790
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Основные
pin count3
product categoryPower MOSFET
automotiveNo
eu rohsCompliant with Exemption
lead shapeThrough Hole
maximum operating temperature (°c)150
mountingThrough Hole
part statusActive
pcb changed3
standard package nameTO-247
supplier packageTO-247AC
eccn (us)EAR99
maximum power dissipation (mw)357000
minimum operating temperature (°c)-55
configurationSingle
hts8541.29.00.95
package height20.82(Max)
package length15.87(Max)
package width5.31(Max)
Вес и габариты
number of elements per chip1
channel typeN
tabTab
channel modeEnhancement
maximum continuous drain current (a)47
maximum drain source resistance (mohm)64@10V
maximum drain source voltage (v)600
maximum gate source leakage current (na)100
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)3.5
maximum idss (ua)1
typical fall time (ns)82
typical gate charge @ 10v (nc)148
typical gate charge @ vgs (nc)148@10V
typical input capacitance @ vds (pf)4810@100V
typical rise time (ns)72
typical turn-off delay time (ns)93
typical turn-on delay time (ns)28
militaryNo
operating junction temperature (°c)-55 to 150
maximum diode forward voltage (v)1.2
maximum positive gate source voltage (v)20
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