SIHG32N50D-GE3, Силовой МОП-транзистор, N Channel, 500 В, 30 А, 0.125 Ом, TO-247AC, Through Hole
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Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторыThe SIHG32N50D-GE3 is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.
• Low area specific ON-resistance• Low input capacitance (CISS)• Reduced capacitive switching losses• High body diode ruggedness• Avalanche energy rated (UIS)• Simple gate drive circuitry• Low figure-of-merit (FOM) Ron x Qg• Fast switching• Halogen-free
• Low area specific ON-resistance• Low input capacitance (CISS)• Reduced capacitive switching losses• High body diode ruggedness• Avalanche energy rated (UIS)• Simple gate drive circuitry• Low figure-of-merit (FOM) Ron x Qg• Fast switching• Halogen-free
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