Основные | |
вес, г | 38 |
mounting type | Through Hole |
package / case | TO-247AC-3 |
length | 15.87mm |
package type | TO-247AC |
minimum operating temperature | -55 C |
width | 5.31mm |
pin count | 3 |
factory pack quantity | 500 |
manufacturer | Vishay |
maximum operating temperature | +150 C |
mounting style | Through Hole |
packaging | Tube |
product category | MOSFET |
product type | MOSFET |
series | E |
subcategory | MOSFETs |
eu rohs | Compliant with Exemption |
lead shape | Through Hole |
maximum operating temperature (°c) | 150 |
mounting | Through Hole |
part status | Active |
pcb changed | 3 |
standard package name | TO-247 |
supplier package | TO-247AC |
eccn (us) | EAR99 |
maximum power dissipation (mw) | 250000 |
minimum operating temperature (°c) | -55 |
configuration | Single |
fall time | 36 ns |
rise time | 32 ns |
factory pack quantity: factory pack quantity: | 500 |
manufacturer: | Vishay |
maximum operating temperature: | +150 C |
minimum operating temperature: | -55 C |
mounting style: | Through Hole |
product category: | MOSFET |
product type: | MOSFET |
series: | E |
subcategory: | MOSFETs |
packaging: | Tube |
height | 20.82mm |
number of channels | 1 Channel |
hts | 8541.29.00.95 |
package height | 20.82(Max) |
package length | 15.87(Max) |
package width | 5.31(Max) |
Вес и габариты | |
package/case: | TO-247-3 |
number of elements per chip | 1 |
channel type | N |
pd - power dissipation: | 250 W |
technology | Si |
number of channels: | 1 Channel |
pd - power dissipation | 250 W |
tab | Tab |
technology: | Si |
configuration: | Single |
transistor configuration | Single |
maximum drain source voltage | 600 V |
maximum gate source voltage | -20 V, +20 V |
maximum continuous drain current | 29 A |
transistor material | Si |
maximum drain source resistance | 125 mΩ |
channel mode | Enhancement |
maximum continuous drain current (a) | 29 |
maximum drain source resistance (mohm) | 125@10V |
maximum drain source voltage (v) | 600 |
maximum gate source voltage (v) | ±20 |
typical fall time (ns) | 36 |
typical gate charge @ 10v (nc) | 85 |
typical gate charge @ vgs (nc) | 85@10V |
typical input capacitance @ vds (pf) | 2600@100V |
typical rise time (ns) | 32 |
typical turn-off delay time (ns) | 63 |
typical turn-on delay time (ns) | 19 |
minimum gate threshold voltage | 2V |
military | No |
rds on - drain-source resistance | 125 mOhms |
transistor polarity | N-Channel |
vds - drain-source breakdown voltage | 600 V |
vgs - gate-source voltage | 30 V |
id - continuous drain current | 29 A |
maximum power dissipation | 250 W |
typical gate charge @ vgs | 85 nC @ 10 V |
typical turn-on delay time | 19 ns |
typical turn-off delay time | 63 ns |
qg - gate charge | 85 nC |
vgs th - gate-source threshold voltage | 4 V |
channel mode: | Enhancement |
id - continuous drain current: | 29 A |
qg - gate charge: | 85 nC |
rds on - drain-source resistance: | 125 mOhms |
transistor polarity: | N-Channel |
vds - drain-source breakdown voltage: | 600 V |
vgs - gate-source voltage: | -30 V, +30 V |
vgs th - gate-source threshold voltage: | 4 V |
typical turn-off delay time: | 63 ns |
typical turn-on delay time: | 19 ns |
fall time: | 36 ns |
rise time: | 32 ns |