SIHG16N50C-E3, MOSFET 500V Vds 30V Vgs TO-247AC

Semiconductors\Discrete Semiconductors\Transistors\MOSFETSiHx16N50C 500V N-Channel Power MOSFETsVishay / Siliconix SiHx16N50C 500V, 16A N-channel Power MOSFETS feature ultra-low 0.38Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 68nC. The low on-resistance of the Vishay / Siliconix SiHP16N50C (TO-220AB package), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) MOSFETs translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, PWM half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies. Gate charges times on-resistance is a low 25.84Ω-nC.