SIA517DJ-T1-GE3

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Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Основные
package / casePowerPAK-SC70-6
minimum operating temperature-55 C
factory pack quantity3000
manufacturerVishay
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Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Основные
package / casePowerPAK-SC70-6
minimum operating temperature-55 C
factory pack quantity3000
manufacturerVishay
maximum operating temperature+150 C
mounting styleSMD/SMT
packagingCut Tape or Reel
product categoryMOSFET
product typeMOSFET
seriesSIA
subcategoryMOSFETs
configurationDual
fall time10 ns, 20 ns
rise time10 ns, 25 ns
number of channels2 Channel
Вес и габариты
tradenameTrenchFET, PowerPAK
part # aliasesSIA517DJ-GE3
technologySi
pd - power dissipation6.5 W
channel modeEnhancement
rds on - drain-source resistance29mО© @ 5A,4.5V
transistor polarityN & P Channel
vds - drain-source breakdown voltage12V
vgs - gate-source voltage1V @ 250uA
id - continuous drain current4.5 A
typical turn-on delay time10 ns, 30 ns
typical turn-off delay time22 ns, 30 ns
forward transconductance - min21 S, 11 S
qg - gate charge15 nC, 20 nC
transistor type1 N-Channel, 1 P-Channel
vgs th - gate-source threshold voltage400 mV
continuous drain current (id) @ 25в°c4.5A
power dissipation-max (ta=25в°c)6.5W
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