SI7980DP-T1-GE3, Trans MOSFET N-CH 20V 8.8A/11A 8-Pin PowerPAK SO T/R

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Артикул: SI7980DP-T1-GE3
Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 20V 8.8A/11A 8-Pin PowerPAK SO T/R
Основные
pin count8
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
150
+
Бонус: 3 !
Бонусная программа
Итого: 150
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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 20V 8.8A/11A 8-Pin PowerPAK SO T/R
Основные
pin count8
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant
lead shapeNo Lead
maximum operating temperature (°c)150
mountingSurface Mount
part statusObsolete
pcb changed8
ppapNo
supplier packagePowerPAK SO
eccn (us)EAR99
maximum power dissipation (mw)3100 Channel 1|3400 Channel 2
minimum operating temperature (°c)-55
configurationDual
process technologyTrenchFET
Вес и габариты
number of elements per chip2
channel typeN
channel modeEnhancement
maximum continuous drain current (a)8.8 Channel 1|11 Channel 2
maximum drain source resistance (mohm)22 10V Channel 1|15 10V Channel 2
maximum drain source voltage (v)20
maximum gate source voltage (v)±16
typical fall time (ns)12 Channel 1|10 Channel 2
typical gate charge @ 10v (nc)17.5 Channel 1|22.5 Channel 2
typical input capacitance @ vds (pf)1010 10V Channel 1|1370 10V Channel 2
typical rise time (ns)18
typical turn-off delay time (ns)20 Channel 1|25 Channel 2
typical turn-on delay time (ns)15 Channel 1|18 Channel 2
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