SI5517DU-T1-GE3, Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R

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Артикул: SI5517DU-T1-GE3
Основные
pin count8
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
240
+
Бонус: 4.8 !
Бонусная программа
Итого: 240
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Основные
pin count8
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant
lead shapeNo Lead
maximum operating temperature (°c)150
mountingSurface Mount
part statusActive
pcb changed8
standard package nameChip FET
supplier packagePowerPAK ChipFET
eccn (us)EAR99
maximum power dissipation (mw)2300
minimum operating temperature (°c)-55
configurationDual Dual Drain
hts8541.29.00.95
package height0.8(Max)
package length3
package width1.9
Вес и габариты
number of elements per chip2
channel typeN|P
channel modeEnhancement
maximum continuous drain current (a)7.2@N Channel|4.6@P Channel
maximum drain source resistance (mohm)72@4.5V@P Channel|39@4.5V@N Channel
maximum drain source voltage (v)20
maximum gate source voltage (v)±8
typical fall time (ns)10@N Channel|55@P Channel
typical gate charge @ vgs (nc)5.5@4.5V@P Channel|6@4.5V@N Channel|9.1@8V|10.5@8V
typical input capacitance @ vds (pf)520@10V@N Channel|455@10V@P Channel
typical rise time (ns)65@N Channel|35@P Channel
typical turn-off delay time (ns)40@P Channel|40@N Channel
typical turn-on delay time (ns)20@N Channel|8@P Channel
militaryNo
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