SI4465ADY-T1-E3, MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V

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Артикул: SI4465ADY-T1-E3
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSi4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100%...
Основные
вес, г0.19
factory pack quantity: factory pack quantity:2500
manufacturer:Vishay
maximum operating temperature:+150 C
580
+
Бонус: 11.6 !
Бонусная программа
Итого: 580
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSi4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Основные
вес, г0.19
factory pack quantity: factory pack quantity:2500
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SI4
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
part # aliases:SI4465ADY-E3
Вес и габариты
package/case:SOIC-8
tradename:TrenchFET
pd - power dissipation:3 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:13.7 A
qg - gate charge:85 nC
rds on - drain-source resistance:16 mOhms
transistor polarity:P-Channel
vds - drain-source breakdown voltage:8 V
vgs - gate-source voltage:-8 V, +8 V
vgs th - gate-source threshold voltage:1 V
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