SI4459ADY-T1-GE3

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Trans MOSFET P-CH 30V 29A 8-Pin SOIC N T/R
Основные
вес, г0.187
pin count8
packagingTape and Reel
product categoryPower MOSFET
260
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Бонус: 5.2 !
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Итого: 260
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Trans MOSFET P-CH 30V 29A 8-Pin SOIC N T/R
Основные
вес, г0.187
pin count8
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant with Exemption
lead shapeGull-wing
maximum operating temperature (°c)150
mountingsurface mount
part statusactive
pcb changed8
ppapNo
standard package nameSOP
supplier packageSOIC N
eccn (us)ear99
maximum power dissipation (mw)3500
minimum operating temperature (°c)-55
configurationSingle Quad Drain Triple Source
process technologyTrenchFET
Вес и габариты
number of elements per chip1
channel typeP
channel modeEnhancement
maximum continuous drain current (a)29
maximum drain source resistance (mohm)5 10V
maximum drain source voltage (v)30
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)2.5
typical fall time (ns)20|40
typical gate charge @ 10v (nc)129
typical gate charge @ vgs (nc)129 10V|61 4.5V
typical input capacitance @ vds (pf)6000 15V
typical rise time (ns)16|130
typical turn-off delay time (ns)80|60
typical turn-on delay time (ns)16|75
rds on - drain-source resistance5mО© @ 15A,10V
transistor polarityP Channel
vds - drain-source breakdown voltage30V
vgs - gate-source voltage2.5V @ 250uA
continuous drain current (id) @ 25в°c29A(Tc)
power dissipation-max (ta=25в°c)7.8W(Tc)
typical output capacitance (pf)860
typical gate to drain charge (nc)23.5
typical gate to source charge (nc)16.5
typical reverse recovery charge (nc)74
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