250 ₽

– +

Бонус: 5 !

Бонусная программа

Итого: 250 ₽

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► Купить SI4447DY-T1-GE3 в интернет-магазине ООО «Телеметрия».

■ Категория: Транзисторы полевые (FETs, MOSFETs)

★ Цена: 250 руб.

Почему выбирают нас:

☎ Заказать: +7 (929) 433-44-45

Основные
вес, г	0.187
pin count	8
packaging	Tape and Reel
product category	Power MOSFET
automotive	No
eu rohs	compliant
lead shape	Gull-wing
maximum operating temperature (°c)	150
mounting	surface mount
part status	NRND
pcb changed	8
standard package name	SOP
supplier package	SOIC N
eccn (us)	ear99
maximum power dissipation (mw)	2000
minimum operating temperature (°c)	-55
configuration	Single Quad Drain Triple Source
package height	1.5(Max)
package length	5(Max)
package width	4(Max)
Вес и габариты
number of elements per chip	1
channel type	P
channel mode	Enhancement
maximum continuous drain current (a)	3.3
maximum drain source resistance (mohm)	72@15V
maximum drain source voltage (v)	40
maximum gate source voltage (v)	±16
maximum gate threshold voltage (v)	2.2
typical fall time (ns)	38
typical gate charge @ vgs (nc)	9@4.5V
typical input capacitance @ vds (pf)	805@20V
typical rise time (ns)	12
typical turn-off delay time (ns)	74
typical turn-on delay time (ns)	8
military	No
typical output capacitance (pf)	120
typical gate to drain charge (nc)	3.6
typical gate to source charge (nc)	2
typical reverse recovery charge (nc)	17

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SI4447DY-T1-GE3