SI4435DDY-T1-GE3
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R
| Основные | |
| pin count | 8 |
| packaging | Tape and Reel |
| product category | Power MOSFET |
| automotive | No |
| eu rohs | Compliant |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | NRND |
| pcb changed | 8 |
| ppap | No |
| standard package name | SOP |
| supplier package | SOIC N |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 2500 |
| minimum operating temperature (°c) | -55 |
| configuration | Single Quad Drain Triple Source |
| process technology | TrenchFET |
| Вес и габариты | |
| number of elements per chip | 1 |
| channel type | P |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 8.1 |
| maximum drain source resistance (mohm) | 24 10V |
| maximum drain source voltage (v) | 30 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 3 |
| maximum idss (ua) | 1 |
| typical fall time (ns) | 12|16 |
| typical gate charge @ 10v (nc) | 32 |
| typical gate charge @ vgs (nc) | 32 10V|15 4.5V |
| typical input capacitance @ vds (pf) | 1350 15V |
| typical rise time (ns) | 8|35 |
| typical turn-off delay time (ns) | 40|45 |
| typical turn-on delay time (ns) | 10|42 |
| rds on - drain-source resistance | 24mО© @ 9.1A,10V |
| transistor polarity | P Channel |
| vds - drain-source breakdown voltage | 30V |
| vgs - gate-source voltage | 3V @ 250uA |
| continuous drain current (id) @ 25в°c | 11.4A |
| power dissipation-max (ta=25в°c) | 2.5W |
| operating junction temperature (°c) | -55 to 150 |
| typical output capacitance (pf) | 215 |
| maximum continuous drain current on pcb @ tc=25°c (a) | 8.1 |
| maximum diode forward voltage (v) | 1.2 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 85 |
| maximum positive gate source voltage (v) | 20 |
| maximum power dissipation on pcb @ tc=25°c (w) | 2.5 |
| maximum pulsed drain current @ tc=25°c (a) | 50 |
| minimum gate threshold voltage (v) | 1 |
| typical diode forward voltage (v) | 0.75 |
| typical gate plateau voltage (v) | 3.5 |
| typical gate to drain charge (nc) | 7.5 |
| typical gate to source charge (nc) | 4 |
| typical reverse recovery charge (nc) | 22 |
| typical reverse recovery time (ns) | 34 |
| typical reverse transfer capacitance @ vds (pf) | 185 15V |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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