SI4186DY-T1-GE3, MOSFET 20V Vds 20V Vgs SO-8

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Артикул: SI4186DY-T1-GE3
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSi4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100%...
Основные
вес, г0.75
factory pack quantity: factory pack quantity:2500
manufacturer:Vishay
maximum operating temperature:+150 C
370
+
Бонус: 7.4 !
Бонусная программа
Итого: 370
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSi4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Основные
вес, г0.75
factory pack quantity: factory pack quantity:2500
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SI4
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
part # aliases:SI4186DY-GE3
Вес и габариты
package/case:SOIC-8
tradename:TrenchFET
pd - power dissipation:6 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:35.8 A
qg - gate charge:90 nC
rds on - drain-source resistance:2.6 mOhms
transistor polarity:N-Channel
vds - drain-source breakdown voltage:20 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1.2 V
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