Si4056ADY-T1-GE3, Dual N-Channel MOSFET, 8.3 A, 100 V, 8-Pin SO-8

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Артикул: Si4056ADY-T1-GE3
Si4056ADY N-Channel MOSFETVishay / Siliconix Si4056ADY N-Channel MOSFET comes in a SO-8 package with 100V drain-source voltage rating and 40A pulsed drain current. The MOSFET features low R DS x Qg figure-of-merit (FOM) and is tuned for the lowest R DS x Q oss FOM. Vishay Si4056ADY N-Channel MOSFET is ideally suited for primary-side switches, LED drivers, load switches, and synchronous rectification applications.
Основные
factory pack quantity: factory pack quantity:2500
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
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Si4056ADY N-Channel MOSFETVishay / Siliconix Si4056ADY N-Channel MOSFET comes in a SO-8 package with 100V drain-source voltage rating and 40A pulsed drain current. The MOSFET features low R DS x Qg figure-of-merit (FOM) and is tuned for the lowest R DS x Q oss FOM. Vishay Si4056ADY N-Channel MOSFET is ideally suited for primary-side switches, LED drivers, load switches, and synchronous rectification applications.
Основные
factory pack quantity: factory pack quantity:2500
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:SOIC-8
tradename:TrenchFET
pd - power dissipation:5 W
number of channels:1 Channel
technology:Si
channel mode:Enhancement
id - continuous drain current:8.3 A
qg - gate charge:19.2 nC
rds on - drain-source resistance:29.2 mOhms
transistor polarity:N-Channel
transistor type:TrenchFET Power MOSFET
vds - drain-source breakdown voltage:100 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:2.5 V
typical turn-off delay time:19 ns
typical turn-on delay time:9 ns
forward transconductance - min:49 S
fall time:4 ns
rise time:6 ns
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