SI3585CDV-T1-GE3, Двойной МОП-транзистор, N и P Дополнение, 20 В, 3.9 А, 0.048 Ом, TSOP, Surface Mou

Integrated MOSFET SolutionsVishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.

Подробное описание

Основные
вес, г	0.33
package / case	TSOP-6
minimum operating temperature	-55 C
factory pack quantity	3000

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Основные
вес, г	0.33
package / case	TSOP-6
minimum operating temperature	-55 C
factory pack quantity	3000
manufacturer	Vishay
maximum operating temperature	+150 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	SI3
subcategory	MOSFETs
configuration	Dual
fall time	9 ns, 28 ns
rise time	16 ns, 37 ns
factory pack quantity: factory pack quantity:	3000
manufacturer:	Vishay
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SI3
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	SI3585CDV-GE3
number of channels	2 Channel
Вес и габариты
package/case:	TSOP-6
tradename:	TrenchFET
tradename	TrenchFET
pd - power dissipation:	1.3 W, 1.4 W
part # aliases	SI3585CDV-GE3
technology	Si
number of channels:	2 Channel
pd - power dissipation	1.3 W, 1.4 W
technology:	Si
configuration:	Dual
channel mode	Enhancement
rds on - drain-source resistance	58 mOhms, 195 mOhms
transistor polarity	N-Channel, P-Channel
vds - drain-source breakdown voltage	20 V
vgs - gate-source voltage	4.5 V
id - continuous drain current	2.1 A, 3.9 A
typical turn-on delay time	15 ns, 16 ns
typical turn-off delay time	13 ns, 25 ns
forward transconductance - min	1 S, 12 S
qg - gate charge	3.2 nC, 6 nC
transistor type	1 N-Channel, 1 P-Channel
vgs th - gate-source threshold voltage	600 mV
channel mode:	Enhancement
id - continuous drain current:	2.1 A, 3.9 A
qg - gate charge:	3.2 nC, 6 nC
rds on - drain-source resistance:	58 mOhms, 195 mOhms
transistor polarity:	N-Channel, P-Channel
transistor type:	1 N-Channel, 1 P-Channel
vds - drain-source breakdown voltage:	20 V
vgs - gate-source voltage:	-8 V, +8 V
vgs th - gate-source threshold voltage:	600 mV
typical turn-off delay time:	13 ns, 25 ns
typical turn-on delay time:	15 ns, 16 ns
forward transconductance - min:	1 S, 12 S
fall time:	9 ns, 28 ns
rise time:	16 ns, 37 ns

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Название организации: ООО "ТЕЛЕМЕТРИЯ"
Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38
ИНН 7536172565
КПП 381201001
ОГРН 1187536004215
Расчетный счет 40702810010000426573
Банк АО «Тинькофф Банк»
БИК банка 044525974
ИНН банка 7710140679
Корреспондентский счет банка 30101810145250000974
Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26

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